NDS351AN
Manufacturer:
On Semiconductor
Mfr.Part #:
NDS351AN
Datasheet:
Description:
MOSFETs SuperSOT-3 SMD/SMT N-Channel number of channels:1 500 mW 30 V Continuous Drain Current (ID):1.4 A 1.8 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Width | 3.05 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 160 MΩ |
| Height | 1.22 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 1.2 A |
| Max Power Dissipation | 460 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 2.1 V |
| Number of Channels | 1 |
| Input capacitance | 145 pF |
| Continuous Drain Current (ID) | 1.4 A |
| Rds On Max | 160 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 3 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 1.8 nC |
| Drain to Source Resistance | 92 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 2.1 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
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